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Wednesday, August 5, 2020 | History

3 edition of 2003 8th International Symposium on Plasma- And Process-Induced Damage found in the catalog.

2003 8th International Symposium on Plasma- And Process-Induced Damage

April 24-25, 2003, Corbeil-Essonnes, France

by IEEE

  • 169 Want to read
  • 23 Currently reading

Published by Institute of Electrical & Electronics Enginee .
Written in English

    Subjects:
  • Applied physics & special topics,
  • Mechanical engineering,
  • Electronics - Semiconductors,
  • Technology & Industrial Arts

  • The Physical Object
    FormatHardcover
    Number of Pages189
    ID Numbers
    Open LibraryOL11000394M
    ISBN 100780377478
    ISBN 109780780377479

    DOI: /ASMC Corpus ID: A case study on severe yield loss caused by wafer arcing in BEOL manufacturing @article{LeeACS, title={A case study on severe yield loss caused by wafer arcing in BEOL manufacturing}, author={Hong-Ji Lee and Hsu-Sheng Yu and Shih-chin Lee and Chih-Kai Yang and Shao-En Chang and Kuo-Feng Lo and Xin-Guan Lin and Nan-Tzu Lian . PV Lithium and Lithium-Ion Batteries-- K. Striebel, K. Zaghib, and D. Guyomard, $ member, $ nonmember, pages This proceedings volume contains 51 papers that were presented at the Lithium and Lithium-Ion Battery Symposium at the th Electrochemical Society Fall Meeting held Oct. , in.

    This text constitutes the proceedings from the International Symposium on Plasma Process-Induced Damage, which took place in Topics covered include plasma equipment, electron shading, device characterization and backend process : R. C. J. Wang, D. S. Su, C. T. Yang et al., “Investigation of electromigration properties and plasma charging damages for plasma treatment process in Cu interconnects,” in Proceedings of the 7th International Symposium on Plasma and Process-Induced Damage, pp. .

    [5] Da-Yuan Lee & al. Impacts of HF etching on Ultra-thin core gate oxide integrity in dual gate oxide CMOS technology. Plasma and process-induced damage, (), 8th international symposium, pp DOI: /ppidCited by: 1. Reference. Ma, S., et al. "Backend dielectric etch induced wafer arcing mechanism and solution." 8th International Symposium Plasma- and Process-Induced Damage.


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2003 8th International Symposium on Plasma- And Process-Induced Damage by IEEE Download PDF EPUB FB2

Get this from a library. Plasma- and Process-Induced Damage, 8th International Symposium. Get this from a library. Plasma- and Process-Induced Damage, 8th International Symposium. [Institute of Electrical and Electronics Engineers;]. Electrical data for both NMOS and PMOS devices are compared and correlated with the physical substrate damage, and suggestions for a residue-free process with minimum substrate damage are given.

Published in: 8th International Symposium Plasma- and Process-Induced Damage. 8th International Symposium on Plasma- and Process-Induced Damage International Symposium on Plasma- & Process-Induced Damage AprilAltis Semiconductor Corbeil-Essonnes, France Technical Co-Sponsors IEEE/Electron Devices Society Japanese Society of.

According to plasma damage monitoring analysis, a large plasma damage during the plasma ignition step was observed, which indicates that failure of the gate oxide was due to the unbalanced plasma ignition in the deposition step.

Published in: 8th International Symposium Plasma- and Process-Induced Damage. Article #: Date of Conference Author: Hee Sook Park, Jong Myeong Lee, Sang Woo Lee, Jung Hun Seo, Kyoung Mo Koo, Hyo Bum Lee, Jae Hoon Jan. Plasma- and Process-Induced Damage, International Symposium on Copy Persistent Link.

Browse Title List. Sign up for Conference Alerts. Proceedings. All Proceedings. Popular. 8th International Symposium Plasma- and Process-Induced Damage. DOI: /PPID Quick Links. Search for Upcoming Conferences. Conference: Plasma- and Process-Induced Damage, 8th International Symposium.

Wang, Z, Ackaert, J, Salm, C & Kuper, FPlasma process-induced latent damage on gate oxide - demonstrated by single-layer and multi-layer antenna structures. in 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA ).Author: Zhichun Wang, J.

Ackaert, C. Salm, F. Kuper. Proceedings of the International Symposium on Plasma Wall Interaction. Kernforschungsanlage Jülich. Browse book content. About the book. Search in this book. Search in this book.

It is shown for example that in the case of a uniform plasma surrounded by a ring of impurities the radiation damage on the wall might be more severe than the. A 'read' is counted each time someone views a publication summary (such as the title, abstract, and list of authors), clicks on a figure, or views or downloads the : T.

Dao. Get this from a library. 8th International Symposium on Plasma- and Process-Induced Damage: April, Corbeil-Essonnes, France. [Koji Eriguchi; S Kishnan; Terence Hook; IEEE Electron Devices Society.; Ōyō Butsuri Gakkai.;].

Arcing can be significantly reduced by a combination of cathode design to support better plasma stability, and electrostatic chuck and process kit design to minimize field gradients across the wafer.

8th International Symposium Plasma- and Process-Induced Damage. 28 May ISBN Information: Print ISBN: INSPEC. 7th International Symposium on Plasma- and Process- Induced Damage, JuneHawaii.

gate, it is considered a charge retention failure. Previously observed damage facts were as follows: 1) Damage was isolated to the plasma via etch step, during which metal and poly antennas become exposed to the plasma.

2) Over-etching at the plasma via etch step. Prediction of plasma charging damage during SiO 2 etching by VicAddress.

In 8th International Symposium on Plasma- and Process-Induced Damage, P2ID (Vol. January, pp. [] Institute of Electrical and Electronics Engineers : T.

Yagisawa, T. Ohmori, T. Shimada, T. Makabe. DOI: /ICSICT Corpus ID: Plasma inducted wafer arcing in back-end process and the impact on reliability @article{LiPlasmaIW, title={Plasma inducted wafer arcing in back-end process and the impact on reliability}, author={Po Li and Jing-Wei Peng and Yung-Cheng Wang and David Wei Zhang}, journal={ IEEE 11th International Conference on Solid-State and.

Backend dielectric etch induced wafer arcing mechanism and solution Abstract: A significant challenge for dielectric etching in advanced chip designs is a new plasma damage phenomenon called "wafer arcing." This randomly occurring problem is characterized by burned metal and "worm-like" arcing marks along the wafer's edge and the conducting Cited by: 5.

8th International Symposium Plasma- and Process-Induced Damage. Post etch killer defect characterization and reduction in a self-aligned double patterning technology. International Symposium on Plasma Process-Induced Damage.

International Symposium on Plasma Process-Induced Damage (OCoLC) Material Type: Conference publication: Document Type: Journal / Magazine / Newspaper: All Authors / Contributors: International Symposium on Plasma Process-Induced Damage.; IEEE Electron Devices Society. A schematic diagram of the test device for measuring PPID is shown in Fig.

materials for the metal-1 and metal-2 (M1 and M2) layers were W and Al, and these for the interlayer dielectric-1 and dielectric-2 (ILD1 and ILD2) layers were PECVD boro-phospho-silicate glass (BPSG) and HDP SiO antenna patterns were a peripheral comb type with antenna ratios (ARs) of1 K, 6 K, and 13 by: 2.

Table of contents for 8th International Symposium on Plasma- and Process-Induced Damage: April, Corbeil-Essonnes, France / Koji Eriguchi, S.

Krishnan, and Terence Hook, editors ; [technical co-sponsors, IEEE/Electron Devices Society, Japanese Society of Applied Physics]. Silicon surface passivation in HF solutions for improved gate oxide.

Evaluation of the plasma less gaseous etching proce ss, Plasma and process-induced damage, (), 8th international.Back-end plasma process-induced damage has become a major concern for device reliability.

Previous methods of process characterization do not allow for isolation of a single process within a metal. Proceedings of the International Symposium on Plasma Process-Induced Damage,pp.

– Google Scholar T.B. Hook, D. Harmon, W. Lai, Gate oxide damage and charging characterization in a mm, triple oxide (// nm) bulk by: 6.